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Field emission - based many-valued processing using carbon nanotube controlled switches - Part 1: Fundamentals
Author(s) -
Anas N. AlRabadi,
Marwan S. Mousa
Publication year - 2012
Publication title -
facta universitatis - series electronics and energetics
Language(s) - English
Resource type - Journals
eISSN - 2217-5997
pISSN - 0353-3670
DOI - 10.2298/fuee1201001a
Subject(s) - field electron emission , carbon nanotube , common emitter , materials science , tungsten , diode , optoelectronics , nanotechnology , current (fluid) , voltage , field (mathematics) , electron , electrical engineering , physics , engineering , mathematics , quantum mechanics , pure mathematics , metallurgy
In this first part of the article, basics of field emission will be presented which will be utilized within the second part of the article for the architecture effectuation of new Carbon Nanotube (CNT) - based controlled nano switches. To implement the field emission CNT - based controlled switch, four field emission CNTs that have single carbon nanotubes as the emitters were tested; two with single-walled CNT and two with multiwalled CNT. A tube with a tungsten tip was also used for comparison. The Fowler- Nordheim analysis of the DC current-voltage data provided reasonable values for the sizes and local fields of emitters. It is also shown within the new implementation of the controlled switch that square-wave pulses from a single laser diode with 20 mW power and 658 nm wavelength which is focused on each emitter increased the emitted current by 5.2% with the CNT and 0.19% with the compared tungsten tip.

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