Theoretical Analysis of AlxGa1-xAs/GaAs Graded Band Gap Solar Cell | Zendy

Belal A. Alshekhli | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Theoretical Analysis of AlxGa1-xAs/GaAs Graded Band Gap Solar Cell

Author(s) -

Belal A. Alshekhli

Publication year - 2011

Publication title -

journal of al-nahrain university-science

Language(s) - English

Resource type - Journals

eISSN - 2519-0881

pISSN - 1814-5922

DOI - 10.22401/jnus.14.3.09

Subject(s) - solar cell , band gap , photovoltaic system , materials science , theory of solar cells , optoelectronics , energy conversion efficiency , x ray absorption spectroscopy , electric field , diffusion , solar cell efficiency , computational physics , optics , physics , absorption spectroscopy , thermodynamics , electrical engineering , engineering , quantum mechanics

The graded band gap AlxGa1-xAs/GaAs solar cell model has been proposed. This model consists of graded compositions material in the surface layer extending from y=0 to y=D, and uniform band gap from y=D to y=L. The model simulates the absorption, generation, current density, spectral response and the solar efficiency generated from the solar spectrum. These photovoltaic parameters have been calculated by a GRAD computer program. Electric field, mobility and diffusion length of holes gradient are assumed constant in the model to get an analytical solutions. The photovoltaic parameters, obtained from the model, are Jsc =33 mA/cm 2 , Voc= .91 V, FF= .87 and η= 31 %. The

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research