
Thermal analysis of A1GaN/GaN HEMT monolithic integration with CMOS on silicon <111> substrates
Author(s) -
Pietro Chyurlia
Publication year - 2018
Language(s) - English
Resource type - Dissertations/theses
DOI - 10.22215/etd/2007-07607
Subject(s) - high electron mobility transistor , optoelectronics , cmos , materials science , silicon , electrical engineering , thermal , engineering physics , engineering , transistor , physics , voltage , meteorology