Thermal analysis of A1GaN/GaN HEMT monolithic integration with CMOS on silicon <111> substrates
Author(s) -
Pietro Chyurlia
Publication year - 2007
Language(s) - English
Resource type - Dissertations/theses
DOI - 10.22215/etd/2007-07607
Subject(s) - high electron mobility transistor , electrical engineering , optoelectronics , materials science , engineering physics , engineering , transistor , voltage
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