Open AccessLow temperature SF6/O2ECR plasma etching for polysilicon gates
Author(s) -
Imad Hasan
Publication year - 2018
Language(s) - Uncategorized
Resource type - Dissertations/theses
DOI - 10.22215/etd/2002-05047
Subject(s) - etching (microfabrication) , polysilicon depletion effect , plasma etching , plasma , materials science , optoelectronics , reactive ion etching , engineering physics , electrical engineering , nanotechnology , engineering , physics , gate oxide , transistor , nuclear physics , voltage , layer (electronics)