Open AccessLow temperature SF6/O2ECR plasma etching for polysilicon gates
Author(s) -
Imad Hasan
Publication year - 2002
Language(s) - Uncategorized
Resource type - Dissertations/theses
DOI - 10.22215/etd/2002-05047
Subject(s) - etching (microfabrication) , plasma etching , materials science , plasma , polysilicon depletion effect , reactive ion etching , optoelectronics , engineering physics , electrical engineering , nanotechnology , engineering , physics , gate oxide , transistor , nuclear physics , layer (electronics) , voltage
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