Open AccessThe reduction of contact resistance in AIGaN/GaN heterostructure field effect transistors
Author(s) -
Rony E. Amaya
Publication year - 2018
Language(s) - English
Resource type - Dissertations/theses
DOI - 10.22215/etd/2002-05046
Subject(s) - contact resistance , materials science , reduction (mathematics) , heterojunction , optoelectronics , nanotechnology , mathematics , geometry , layer (electronics)