z-logo
open-access-imgOpen Access
Hot-carrier induced degradation in surface pMOSFETs.
Author(s) -
Marinette Besson
Publication year - 2018
Language(s) - Uncategorized
Resource type - Dissertations/theses
DOI - 10.22215/etd/1994-02634
Subject(s) - degradation (telecommunications) , materials science , electrical engineering , engineering

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here