Open AccessCharacterization of MOS devices fabricated on laser crystallized polysilicon.
Author(s) -
Kamalesh Dwivedi
Publication year - 1982
Language(s) - English
Resource type - Dissertations/theses
DOI - 10.22215/etd/1982-00709
Subject(s) - materials science , characterization (materials science) , optoelectronics , laser , polysilicon depletion effect , engineering physics , nanotechnology , electrical engineering , engineering , optics , transistor , physics , voltage , gate oxide
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom