Open AccessElectron beam interactions with gallium arsenide field effect transistors
Author(s) -
Raymond Haythornthwaite
Publication year - 2018
Language(s) - English
Resource type - Dissertations/theses
DOI - 10.22215/etd/1980-00506
Subject(s) - gallium arsenide , field effect transistor , materials science , transistor , cathode ray , optoelectronics , electron , physics , electrical engineering , engineering , nuclear physics , voltage