The effect of electron-ion coupling on radiation damage simulations of a pyrochlore waste form.
Author(s) -
Ahmed Ismail,
Stephen M. Foiles,
Jeffery A. Greathouse,
Paul Crozier
Publication year - 2009
Language(s) - English
Resource type - Reports
DOI - 10.2172/974414
Subject(s) - pyrochlore , ion , atomic physics , electron , cascade , collision cascade , radiation damage , coupling (piping) , oxygen , diffusion , materials science , molecular dynamics , irradiation , atom (system on chip) , chemistry , thermodynamics , physics , nuclear physics , nanotechnology , computational chemistry , thin film , organic chemistry , chromatography , computer science , sputtering , metallurgy , embedded system , phase (matter)
We have performed molecular dynamics simulations of cascade damage in the gadolinium pyrochlore Gd{sub 2}Zr{sub 2}O{sub 7}, comparing results obtained from traditional methodologies that ignore the effect of electron-ion interactions with a 'two-temperature model' in which the electronic subsystem is modeled using a diffusion equation to determine the electronic temperature. We find that the electron-ion interaction friction coefficient {gamma}{sub p} is a significant parameter in determining the behavior of the system following the formation of the primary knock-on atom (here, a U{sup 3+} ion). The mean final U{sup 3+} displacement and the number of defect atoms formed is shown to decrease uniformly with increasing {gamma}{sub p}; however, other properties, such as the final equilibrium temperature and the oxygen-oxygen radial distribution function show a more complicated dependence on {gamma}{sub p}.
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