Open AccessDetermination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.
Author(s) -
Kendall Russell DePriest,
Karen C. Kajder,
Curtis D. Peters
Publication year - 2008
Language(s) - English
Resource type - Reports
DOI - 10.2172/940518
Subject(s) - nuclear engineering , transistor , neutron , nuclear physics , irradiation , sensitivity (control systems) , diffusion , materials science , shutdown , physics , radiochemistry , electrical engineering , engineering , chemistry , electronic engineering , voltage , thermodynamics
Sandia National Laboratories (SNL) has embarked on a program to develop a methodology to use damage relations techniques (alternative experimental facilities, modeling, and simulation) to understand the time-dependent effects in transistors (and integrated circuits) caused by neutron irradiations in the Sandia Pulse Reactor-III (SPR-III) facility. The development of these damage equivalence techniques is necessary since SPR-III was shutdown in late 2006. As part of this effort, the late time {gamma}-ray sensitivity of a single diffusion lot of 2N2222A transistors has been characterized using one of the {sup 60}Co irradiation cells at the SNL Gamma Irradiation Facility (GIF). This report summarizes the results of the experiments performed at the GIF