Open AccessDetermination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.
Author(s) -
K. Russell DePriest,
Karen Kajder,
Curtis Peters
Publication year - 2008
Language(s) - English
Resource type - Reports
DOI - 10.2172/940518
Subject(s) - nuclear engineering , transistor , neutron , nuclear physics , irradiation , sensitivity (control systems) , diffusion , materials science , shutdown , physics , radiochemistry , electrical engineering , engineering , chemistry , electronic engineering , voltage , thermodynamics
Sandia National Laboratories (SNL) has embarked on a program to develop a methodology to use damage relations techniques (alternative experimental facilities, modeling, and simulation) to understand the time-dependent effects in transistors (and integrated circuits) caused by neutron irradiations in the Sandia Pulse Reactor-III (SPR-III) facility. The development of these damage equivalence techniques is necessary since SPR-III was shutdown in late 2006. As part of this effort, the late time {gamma}-ray sensitivity of a single diffusion lot of 2N2222A transistors has been characterized using one of the {sup 60}Co irradiation cells at the SNL Gamma Irradiation Facility (GIF). This report summarizes the results of the experiments performed at the GIF
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom