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Microwave to millimeter-wave electrodynamic response and applications of semiconductor nanostructures: LDRD project 67025 final report.
Author(s) -
Eric A. Shaner,
Mark Lee,
Richard D. Averitt,
Clark Highstrete,
Antoinette J. Taylor,
Willie J. Padilla,
John L. Reno,
Michael C. Wanke,
S. J. Allen
Publication year - 2006
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/899370
Subject(s) - nanowire , materials science , heterojunction , chemical vapor deposition , optoelectronics , nanotechnology , metalorganic vapour phase epitaxy , semiconductor , wafer , indium nitride , nitride , solid state lighting , nanodevice , light emitting diode , epitaxy , layer (electronics)
Solid-state lighting (SSL) technologies, based on semiconductor light emitting devices, have the potential to reduce worldwide electricity consumption by more than 10%, which could significantly reduce U.S. dependence on imported energy and improve energy security. The III-nitride (AlGaInN) materials system forms the foundation for white SSL and could cover a wide spectral range from the deep UV to the infrared. For this LDRD program, we have investigated the synthesis of single-crystalline III-nitride nanowires and heterostructure nanowires, which may possess unique optoelectronic properties. These novel structures could ultimately lead to the development of novel and highly efficient SSL nanodevice applications. GaN and III-nitride core-shell heterostructure nanowires were successfully synthesized by metal organic chemical vapor deposition (MOCVD) on two-inch wafer substrates. The effect of process conditions on nanowire growth was investigated, and characterization of the structural, optical, and electrical properties of the nanowires was also performed

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