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High-pressure, High-strain-rate Materials Effects
Author(s) -
D. H. Kalantar,
J. Belak,
Eduardo M. Bringa,
K. S. Budil,
Jeff Colvin,
M. S. R. Niranjan Kumar,
Marc A. Meyers,
K. Rosolanková,
Robert E. Rudd,
M. Schneider,
James S. Stölken,
J. S. Wark
Publication year - 2004
Language(s) - English
Resource type - Reports
DOI - 10.2172/893565
Subject(s) - diffraction , materials science , strain rate , shock wave , shock (circulatory) , perpendicular , x ray crystallography , laser , compression (physics) , optics , streak camera , transmission electron microscopy , composite material , mechanics , physics , nanotechnology , geometry , medicine , mathematics
A 3-year LDRD-ER project to study the response of shocked materials at high pressure and high strain rate has concluded. This project involved a coordinated effort to study single crystal samples that were shock loaded by direct laser irradiation, in-situ and post-recovery measurements, and molecular dynamics and continuum modeling. Laser-based shock experiments have been conducted to study the dynamic response of materials under shock loading materials at a high strain-rate. Experiments were conducted at pressures above the published Hugoniot Elastic Limit (HEL). The residual deformation present in recovered samples was characterized by transmission electron microscopy, and the response of the shocked lattice during shock loading was measured by in-situ x-ray diffraction. Static film and x-ray streak cameras recorded x-rays diffracted from lattice planes of Cu and Si both parallel and perpendicular to the shock direction. Experiments were also conducted using a wide-angle detector to record x-rays diffracted from multiple lattice planes simultaneously. This data showed uniaxial compression of Si (100) along the shock direction and 3-dimensional compression of Cu (100). In the case of the Si diffraction, there was a multiple wave structure observed. We present results of shocked Si and Cu obtained with a new large angle diffraction diagnostic, and discuss the results in the context of detailed molecular dynamics simulations and post-processing

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