Open AccessQuaternary InGaAsSb Thermophotovoltaic Diodes
Author(s) -
MW Dashiell,
JF Beausang,
H Ehsani,
GJ Nichols,
D.M. DePoy,
L. R. Danielson,
P Talamo,
KD Rahner,
E J Brown,
SR Burger,
PM Foruspring,
WF Topper,
P.F. Baldasaro,
CA Wang,
R Huang,
M Connors,
G Turner,
Z Shellenbarger,
G Taylor,
J Li,
R Martinelli,
D Donetski,
S Anikeev,
G Belenky,
S Luryi
Publication year - 2006
Language(s) - English
Resource type - Reports
DOI - 10.2172/881293
Subject(s) - thermophotovoltaic , optoelectronics , materials science , diode , electroluminescence , energy conversion efficiency , band gap , auger effect , antimonide , auger , atomic physics , physics , common emitter , nanotechnology , layer (electronics)
In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects