Hardware Testing of the BaBar Drift Chamber Electronics Upgrade (SULI paper)
Author(s) -
B. R. Littlejohn,
Yiwen Chu,
L. A. M. Wiik
Publication year - 2006
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/877992
Subject(s) - upgrade , firmware , electronics , reliability (semiconductor) , detector , data acquisition , computer hardware , vmebus , computer science , electrical engineering , physics , engineering , operating system , power (physics) , quantum mechanics
The BaBar drift chamber provides position, timing, and dE/dx measurements for charged decay products of the {Upsilon}(4S) resonance at 10.58 GeV. Increasing data collection rates stemming from higher PEP II luminosities and background have highlighted dead time problems in the drift chamber's data acquisition system. A proposed upgrade, called Phase II, aims to solve the problem with the introduction of rewritable, higher-memory firmware in the DAQ front-end electronics that lowers dataflow through the system. After fabrication, the new electronics components were tested to ensure proper function and reliability before installation in the detector. Some tests checked for successful operation of individual components, while others operated entire sections of the upgraded system in a mockup drift chamber environment. This paper explains the testing process and presents results regarding performance of the upgrade electronics
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