Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb | Zendy

D. Donetsky | Zendy; S Anikeev | Zendy; Ning Gu | Zendy; Gregory Belenky | Zendy; Serge Luryi | Zendy; CA Wang | Zendy; DA Shiau | Zendy; MW Dashiell | Zendy; John F. Beausang | Zendy; and G Nichols | Zendy

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Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

Author(s) -

D. Donetsky,

S Anikeev,

Ning Gu,

Gregory Belenky,

Serge Luryi,

CA Wang,

DA Shiau,

MW Dashiell,

John F. Beausang,

and G Nichols

Publication year - 2004

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/837455

Subject(s) - recombination , heterojunction , epitaxy , optoelectronics , thermionic emission , carrier lifetime , photoluminescence , materials science , superlattice , chemistry , silicon , electron , physics , nanotechnology , layer (electronics) , biochemistry , quantum mechanics , gene

This work summarizes recent data on minority carrier lifetime in n- and p-type double heterostructures (DHs) of 0.5-0.6 eV GaInAsSb confined with GaSb and AlGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination in GaSb/GaInAsSb/GaSb DHs is thermionic emission of carriers over the heterobarrier. Considerable improvement of carrier confinement was obtained with 1 eV AlGaAsSb cap layers. Optimization of the epitaxial growth resulted in a recombination velocity at GaInAsSb/AlGaAsSb interface as low as 30 cm/s

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