z-logo
open-access-imgOpen Access
Instrumental Effects in Secondary Electron Yield and Energy Distribution Measurements
Author(s) -
R. E. Kirby
Publication year - 2004
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/826951
Subject(s) - electron , secondary electrons , yield (engineering) , secondary emission , spectrum analyzer , detector , atomic physics , computational physics , materials science , physics , optics , nuclear physics , composite material
Measurement of secondary electron yields and electron energy distributions appears straightforward - simple equipment, simple electronics, easy-to-acquire data, at least in a laboratory setting. Unfortunately, the low secondary electron energy (2-5 eV) and the extreme sensitivity of the yield to surface condition and surrounding environment make the measurement details anything but simple. These problems affect the accuracy and interpretation of the experimental results, often in a subtle way. Most troublesome is the production of unwanted (and unexpected) secondary electrons from within the electron sources and detectors, and tertiary electrons from the surrounding vacuum chamber environment. In addition, the sample surface condition can change during measurement, for example, through electron damage or enhanced oxidation/carburization. Electron source, analyzer, and sample effects will be discussed.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom