Open AccessNon-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report
Author(s) -
M. C. Tamargo,
G. F. Neumark
Publication year - 2004
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/824891
Subject(s) - dopant , doping , molecular beam epitaxy , materials science , band gap , optoelectronics , semiconductor , epitaxy , wide bandgap semiconductor , nanotechnology , engineering physics , physics , layer (electronics)
It is well known that it has been difficult to obtain good bipolar doping in a wide bandgap semiconductors. Developed a new doping technique, involving use of a standard dopant, together with a ''co-dopant'' used to facilitate the introduction of the dopant, and have vastly alleviated this problem
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