Open AccessDefect studies in thin film III-V thin film semiconductors. Progress report, September 1986--May 1987
Author(s) -
D. G. Ast
Publication year - 1987
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/82405
Subject(s) - epitaxy , dislocation , materials science , semiconductor , thin film , substrate (aquarium) , layer (electronics) , condensed matter physics , optoelectronics , nanotechnology , composite material , physics , geology , oceanography
Progress is reported on the following: defect formation at the InGaAs/GaAs interface as a function of the misfit parameter, layer thickness, and starting substrate dislocation density; and epitaxial growth on very small islands to verify theoretical predictions of critical layer thickness as a function of area
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom