Open AccessOhmic Contacts to n-type GaSb and n-type GaInAsSb
Author(s) -
Ru Huang,
C.A. Wang,
C.T. Harris,
M.K. Connors,
D.A. Shiau
Publication year - 2003
Language(s) - English
Resource type - Reports
DOI - 10.2172/822096
Subject(s) - ohmic contact , electrical resistivity and conductivity , omega , doping , materials science , contact resistance , sheet resistance , type (biology) , optoelectronics , layer (electronics) , nanotechnology , electrical engineering , physics , quantum mechanics , engineering , ecology , biology
An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GaInAsSb and n-GaSb samples with varying doping, grown on both n-GaSb and semi-insulating GaAs substrates. These samples were fabricated into mesa-etched TLM structures, and the specific contact resistivity and sheet resistance of these layers as a function of majority electron concentration were measured. Extremely low specific contact resistivities of about 2 x 10{sup -6} {Omega}-cm{sup 2} and sheet resistances of about 4 {Omega}/{open_square} are found for n-type GaInAsSb doped at about 3 x 10{sup 18} cm{sup -3}