Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices | Zendy

C.A. Wang | Zendy; D.A. Shiau | Zendy; Peter G. Murphy | Zendy; P. W. O’Brien | Zendy; Robin Huang | Zendy; Michael K. Connors | Zendy; Allan Anderson | Zendy; D. Donetsky | Zendy; С. Г. Аникеев | Zendy; Gregory Belenky | Zendy; D. M. DePoy | Zendy; G. Nichols | Zendy

Open Access

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

Author(s) -

C.A. Wang,

D.A. Shiau,

Peter G. Murphy,

P. W. O’Brien,

Robin Huang,

Michael K. Connors,

Allan Anderson,

D. Donetsky,

С. Г. Аникеев,

Gregory Belenky,

D. M. DePoy,

G. Nichols

Publication year - 2003

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/821870

Subject(s) - optoelectronics , epitaxy , materials science , wafer , thermophotovoltaic , gallium antimonide , wafer bonding , layer (electronics) , substrate (aquarium) , interconnection , common emitter , nanotechnology , superlattice , oceanography , geology , computer network , computer science

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V

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