Open AccessGaInAsSb/A1GaAsSb/Sb Thermophotovoltaic Devices With an Internal Back-Surface Reflector Formed by Wafer Bonding
Author(s) -
C.A. Wang,
Robin Huang,
D.A. Shiau,
M.K. Connors,
Peter G. Murphy,
P. W. O’Brien,
Allan Anderson,
D. M. DePoy,
G. Nichols,
M. N. Palmasiano
Publication year - 2002
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/821864
Subject(s) - thermophotovoltaic , optoelectronics , materials science , wafer bonding , wafer , reflector (photography) , interconnection , voltage , layer (electronics) , common emitter , optics , electrical engineering , nanotechnology , telecommunications , engineering , light source , physics
A novel implementation for GAInAsSb/AlGaAsSb/GaSb TPV cells with an internal back-surface reflector (BSR) formed by wafer bonding to GaAs is demonstrated. The SiO{sub x}/Ti/Au internal BSR enhances optical absorption within the device, while the dielectric layer provides electrical isolation. This configuration has the potential to improve TPV device performance; is compatible with monolithic series-interconnection of TPV cells for building voltage; and can mitigate the requirements of filters used for front-surface spectral control. At a short-circuit density of 0.4 A/cm{sup 2}, the open-circuit voltage of a single TPV cell is 0.2 V, compared to 0.37 and 1.8 V for 2- and 10-junction series-interconnected TPV cells, respectively
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