Lattice-Matched GaInAsSb/A1GaAsSb/GaSb Materials for Thermophotovoltaic Devices | Zendy

C.A. Wang | Zendy; C.J. Vineis | Zendy; H. K. Choi | Zendy; Michael K. Connors | Zendy; Rengui Huang | Zendy; L.R. Daielson | Zendy; G. Nichols | Zendy; G.W. Charache | Zendy; D. Donetsky | Zendy; S. Anikeef | Zendy; Gregory Belenky | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Lattice-Matched GaInAsSb/A1GaAsSb/GaSb Materials for Thermophotovoltaic Devices

Author(s) -

C.A. Wang,

C.J. Vineis,

H. K. Choi,

Michael K. Connors,

Rengui Huang,

L.R. Daielson,

G. Nichols,

G.W. Charache,

D. Donetsky,

S. Anikeef,

Gregory Belenky

Publication year - 2002

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/821862

Subject(s) - thermophotovoltaic , optoelectronics , materials science , epitaxy , microstructure , engineering physics , electronic engineering , nanotechnology , composite material , engineering , common emitter , layer (electronics)

High-performance GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices with quantum efficiency and fill factor near theoretical limits and open-circuit voltage within about 15% of the limit can be routinely fabricated. To achieve further improvements in TPV device performance, detailed materials studies of GaInAsSb epitaxial growth, the microstructure, and minority carrier lifetime, along with device structure considerations are reported. This paper discusses the materials and device issues, and their implications on TPV device performance. In addition, improvements in TPV performance with integrated distributed Bragg reflectors and back-surface reflectors are discussed

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research