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Growth of Uniform Ga{sub 1-x}In{sub x}Sb Bulk Crystals by Self-Solute Feeding Technique
Author(s) -
Pradip Dutta,
G. Rajagopalan,
R.J. Gutmann,
G. Nichols
Publication year - 2003
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/821861
Subject(s) - homogeneous , alloy , crystallography , materials science , growth rate , crystal growth , chemistry , analytical chemistry (journal) , thermodynamics , metallurgy , physics , chromatography , mathematics , geometry
Compositionally homogeneous, crack-free bulk crystals of Ga{sub 1-x}In{sub x}Sb with x as high as 0.4 has been grown for the first time using a self-solute feeding method. A balance between the growth rate and the spacing between the solute and the growth interface has been found to be crucial in maintaining uniform alloy composition

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