Growth of Uniform Ga{sub 1-x}In{sub x}Sb Bulk Crystals by Self-Solute Feeding Technique
Author(s) -
Pradip Dutta,
G. Rajagopalan,
R.J. Gutmann,
G. Nichols
Publication year - 2003
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/821861
Subject(s) - homogeneous , alloy , crystallography , materials science , growth rate , crystal growth , chemistry , analytical chemistry (journal) , thermodynamics , metallurgy , physics , chromatography , mathematics , geometry
Compositionally homogeneous, crack-free bulk crystals of Ga{sub 1-x}In{sub x}Sb with x as high as 0.4 has been grown for the first time using a self-solute feeding method. A balance between the growth rate and the spacing between the solute and the growth interface has been found to be crucial in maintaining uniform alloy composition
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom