Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance | Zendy

C.A. Wang | Zendy; Peter G. Murphy | Zendy; P. W. O’Brien | Zendy; D.A. Shiau | Zendy; Allan Anderson | Zendy; Z. L. Liau | Zendy; D. M. DePoy | Zendy; G. Nichols | Zendy

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Wafer-Bonded Internal Back-Surface Reflectors for Enhanced TPV Performance

Author(s) -

C.A. Wang,

Peter G. Murphy,

P. W. O’Brien,

D.A. Shiau,

Allan Anderson,

Z. L. Liau,

D. M. DePoy,

G. Nichols

Publication year - 2002

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/821703

Subject(s) - wafer , optoelectronics , reflector (photography) , materials science , layer (electronics) , wafer bonding , substrate (aquarium) , dielectric , absorption (acoustics) , optics , composite material , light source , oceanography , physics , geology

This paper discusses recent efforts to realize GaInAsSb/GaSb TPV cells with an internal back-surface reflector (BSR). The cells are fabricated by wafer bonding the GaInAsSb/GaSb device layers to GaAs substrates with a dielectric/Au reflector, and subsequently removing the GaSb substrate. The internal BSR enhances optical absorption within the device while the dielectric layer provides electrical isolation. This approach is compatible with monolithic integration of series-connected TPV cells and can mitigate the requirements of filters used for front-surface spectral control

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