Open AccessRecombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications
Author(s) -
Rajender Kumar,
Johannes Gutmann,
J.M. Borrego,
Prashanta Dutta,
C.A. Wang,
Ramon U. Martinelli,
G. Nichols
Publication year - 2003
Language(s) - English
Resource type - Reports
DOI - 10.2172/821373
Subject(s) - thermophotovoltaic , auger effect , recombination , materials science , doping , epitaxy , optoelectronics , band gap , atomic physics , auger , layer (electronics) , physics , chemistry , common emitter , nanotechnology , biochemistry , gene
Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk recombination parameter and surface recombination velocity (SRV) in doubly-capped 0.55 eV, 2 x 10{sup 17} cm{sup -3} doped p-InGaAsSb epitaxial layers for thermophotovoltaic (TPV) applications. Bulk lifetimes of 90-100 ns and SRVs of 680 cm/s to 3200 cm/s (depending on the capping layer) are obtained, with higher doping and higher bandgap capping layers most effective in reducing SRV. RF photoreflectance measurements and one-dimensional device simulations are compatible with a radiative recombination coefficient (B) of 3 x 10{sup -11} cm{sup 3}/s and Auger coefficient (C) of 1 x 10{sup -28} cm{sup 6}/s