Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications | Zendy

Ravi Kumar | Zendy; Johannes Gutmann | Zendy; J.M. Borrego | Zendy; P.S. Dutta | Zendy; C.A. Wang | Zendy; Ramon U. Martinelli | Zendy; G. Nichols | Zendy

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Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications

Author(s) -

Ravi Kumar,

Johannes Gutmann,

J.M. Borrego,

P.S. Dutta,

C.A. Wang,

Ramon U. Martinelli,

G. Nichols

Publication year - 2003

Language(s) - English

Resource type - Reports

DOI - 10.2172/821373

Subject(s) - thermophotovoltaic , auger effect , recombination , materials science , doping , epitaxy , optoelectronics , band gap , atomic physics , auger , layer (electronics) , physics , chemistry , common emitter , nanotechnology , biochemistry , gene

Radio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk recombination parameter and surface recombination velocity (SRV) in doubly-capped 0.55 eV, 2 x 10{sup 17} cm{sup -3} doped p-InGaAsSb epitaxial layers for thermophotovoltaic (TPV) applications. Bulk lifetimes of 90-100 ns and SRVs of 680 cm/s to 3200 cm/s (depending on the capping layer) are obtained, with higher doping and higher bandgap capping layers most effective in reducing SRV. RF photoreflectance measurements and one-dimensional device simulations are compatible with a radiative recombination coefficient (B) of 3 x 10{sup -11} cm{sup 3}/s and Auger coefficient (C) of 1 x 10{sup -28} cm{sup 6}/s

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