Open AccessAlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy
Author(s) -
C.A. Wang,
C.J. Vineis,
D.R. Calawa
Publication year - 2002
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/820701
Subject(s) - electrical resistivity and conductivity , vapor phase , epitaxy , materials science , omega , group 2 organometallic chemistry , semiconductor materials , optoelectronics , crystallography , chemistry , semiconductor , nanotechnology , physics , organic chemistry , layer (electronics) , quantum mechanics , thermodynamics , molecule
The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure
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