Open AccessA CRITICAL ANALYSIS OF IGBT GEOMETRIES, WITH THE INTENTION OF MITIGATING UNDESIRABLE DESTRUCTION CAUSED BY FAULT SCENARIOS OF AN ADVERSE NATURE
Author(s) -
greg leyh
Publication year - 2003
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/815631
Subject(s) - insulated gate bipolar transistor , traction (geology) , electrical engineering , bipolar junction transistor , power (physics) , limit (mathematics) , klystron , transistor , computer science , automotive engineering , electronic engineering , reliability engineering , engineering , mechanical engineering , voltage , physics , mathematical analysis , mathematics , quantum mechanics
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