Direct Conversion of Radioisotope Energy to Electricity

A new chemical reactor has been tested for Field Enhanced Diffusion by Optical Activation doping and purification of SiC, GaN and AlN films. Different conditions have been used on SiC, GaN and AlN samples including temperature variation, electrical field variation, variations in electrical current and optical activation. A 5mW (630-680) nm laser was used for optical activation. It was observed that optical activation has a major effect on ion drift rates. It was also observed that the magnitude of the electrical current also enhanced ion drift rates by a postulated current drag mechanism. I-V characteristic curves were measured to verify changes in the electrical properties of the samples SIMS was used to analyze the concentrations of impurities in the film samples before and after treatment. It has been demonstrated that the field-enhanced diffusion by optical activation method can dope and purify the films. As a result, the electrical properties of the wafers have been significantly improved during treatment especially in cases where a laser is used