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Development of Gamma-Ray Compton Imager Using Room-Temperature 3-D Position Sensitive Semiconductor Detectors
Author(s) -
Zhong He,
David Whe,
G. Knoll
Publication year - 2003
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/812020
Subject(s) - spectrometer , physics , compton scattering , detector , angular resolution (graph drawing) , monte carlo method , optics , semiconductor detector , gamma ray , radiation , sensitivity (control systems) , scattering , nuclear physics , engineering , statistics , mathematics , combinatorics , electronic engineering
During the three years of this project, two 3-dimensional position sensitive CdZnTe spectrometers were upgraded in collaboration with Johns Hopkins University Applied Physics Laboratory. A prototype Compton-scattering gamma-ray imager was assembled using the two upgraded CdZnTe detectors. The performance of both gamma-ray spectrometers were individually tested. The angular resolution and detection sensitivity of the imaging system were measured using both a point and a line-shaped 137 Cs radiation source. The measurement results are consistent with that obtained from Monte-Carlo simulations performed during the early phase of the project

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