Open AccessOn the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage
Author(s) -
T. Höchbauer
Publication year - 2001
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/806822
Subject(s) - silicon , materials science , ion implantation , hydrogen , annealing (glass) , cleavage (geology) , ion , boron , strained silicon , silicon on insulator , nanotechnology , chemical physics , composite material , analytical chemistry (journal) , chemical engineering , optoelectronics , crystalline silicon , chemistry , organic chemistry , chromatography , amorphous silicon , fracture (geology) , engineering
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