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On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage
Author(s) -
T. Höchbauer
Publication year - 2002
Language(s) - English
Resource type - Reports
DOI - 10.2172/801383
Subject(s) - silicon , materials science , ion implantation , hydrogen , cleavage (geology) , annealing (glass) , boron , ion , strained silicon , silicon on insulator , nanotechnology , composite material , chemical engineering , chemical physics , analytical chemistry (journal) , optoelectronics , crystalline silicon , chemistry , organic chemistry , amorphous silicon , fracture (geology) , engineering , chromatography
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