Open AccessX-Ray Diffuse Scattering Study of the Kinetics of Stacking Fault Growth and Annihilation in Boron-Implanted Silicon.
Author(s) -
J. R. Patel
Publication year - 2002
Language(s) - English
Resource type - Reports
DOI - 10.2172/799091
Subject(s) - silicon , boron , stacking fault , materials science , stacking , scattering , crystallography , kinetics , annihilation , intensity (physics) , dislocation , molecular physics , chemistry , optics , optoelectronics , composite material , nuclear physics , physics , quantum mechanics , organic chemistry
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