Open AccessCharacterization of SF6/Argon Plasmas for Microelectronics Applications
Author(s) -
Gregory A. Hebner,
I. C. Abraham,
J. R. Woodworth
Publication year - 2002
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/793326
Subject(s) - microelectronics , argon , plasma , characterization (materials science) , ion , laser , interferometry , materials science , analytical chemistry (journal) , mass spectrometry , atomic physics , ion source , microwave , plasma diagnostics , inductively coupled plasma , chemistry , nanotechnology , physics , optics , nuclear physics , organic chemistry , chromatography , quantum mechanics
This report documents measurements in inductively driven plasmas containing SF{sub 6}/Argon gas mixtures. The data in this report is presented in a series of appendices with a minimum of interpretation. During the course of this work we investigated: the electron and negative ion density using microwave interferometry and laser photodetachment; the optical emission; plasma species using mass spectrometry, and the ion energy distributions at the surface of the rf biased electrode in several configurations. The goal of this work was to assemble a consistent set of data to understand the important chemical mechanisms in SF{sub 6} based processing of materials and to validate models of the gas and surface processes
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