Open AccessHigh Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications
Author(s) -
ALBERT BACA,
Ronald Briggs,
A.A. Allerman,
Christine C. Mitchell,
Arthur Fischer,
C. I.H. Ashby,
Alan F. Wright,
R. J. Shul
Publication year - 2001
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/789599
Subject(s) - design for manufacturability , optoelectronics , materials science , reliability (semiconductor) , gallium arsenide , oxide , fabrication , electrical engineering , engineering , physics , metallurgy , medicine , power (physics) , alternative medicine , pathology , quantum mechanics
Great strides have been made in the development of ultraviolet LED materials and devices. Power levels in the near UV (below 390 nm) have been improved from the 10 W to the 1 mW level through improvements in the growth and design of AlInGaN alloys. High frequency AlGaN/GaN HEMTs have been developed with ft of 65 GHz and fmax of 85 GHz, all while attaining breakdown voltage greater than 100 V. A new breakthrough in the lateral overgrowth of GaN materials promises to further improve these devices.
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