RIBE Flux vs. Position Monitor | Zendy

T. W. Hamilton | Zendy

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RIBE Flux vs. Position Monitor

Author(s) -

T. W. Hamilton

Publication year - 2000

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/766234

Subject(s) - measure (data warehouse) , wafer , ion , ion beam , ion beam analysis , beam (structure) , position (finance) , flux (metallurgy) , plasma , surface (topology) , particle (ecology) , atomic physics , materials science , physics , nanotechnology , computer science , optics , nuclear physics , database , geometry , finance , quantum mechanics , geology , economics , metallurgy , mathematics , oceanography

Recent work at SNL has demonstrated unique capabilities to experimentally measure a variety of ion and neutral particle parameters inside surface features being etched, including ion energy, angular distributions, ion and neutral species measurements. This report details the construction of one recent laboratory tool designed to measure ion beam uniformity over the wafer surface in a reactive ion beam etch system, (RIBE). This information is critical to the development of accurate plasma processing computer models and simulation methods, and is essential for reducing the cost of introducing new processing technologies

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