Open AccessMeasurement techniques for high power semiconductor materials and devices. Annual report, January 1, 1976--December 31, 1976. [Silicon wafers]
Author(s) -
D.L. Blackburn,
R. Y. Koyama,
Frank F. Oettinger,
G.J. Rogers
Publication year - 1977
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/7316636
Subject(s) - power semiconductor device , wafer , semiconductor device , electrical engineering , reliability (semiconductor) , thyristor , semiconductor , engineering physics , diode , power (physics) , electronic engineering , materials science , engineering , nanotechnology , voltage , physics , layer (electronics) , quantum mechanics
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