Open AccessLocalized excitations in amorphous silicon alloys
Publication year - 1987
Language(s) - Uncategorized
Resource type - Reports
DOI - 10.2172/7162250
Subject(s) - dopant , materials science , band gap , doping , impurity , silicon , tin , fermi level , valence (chemistry) , condensed matter physics , amorphous solid , amorphous silicon , valence band , chemical bond , crystallography , atomic physics , molecular physics , chemistry , crystalline silicon , optoelectronics , electron , physics , metallurgy , organic chemistry , quantum mechanics
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