Open AccessAFM studies of a new type of radiation defect on mica surfaces caused by highly charged ion impact
Author(s) -
C. Ruehlicke,
M.A. Briere,
D. Schneider
Publication year - 1994
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/71369
Subject(s) - mica , ion , ionization , muscovite , atomic physics , atomic force microscopy , highly charged ion , electron , irradiation , charged particle , ion beam , radiation damage , materials science , radiation , chemistry , molecular physics , analytical chemistry (journal) , nanotechnology , ion source , optics , composite material , quartz , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics
Radiation induced defects on mica caused by the impact of slow very highly charged ions (SVHCI) have been investigated with an atomic force microscope (AFM). Freshly cleaved surfaces of different types of muscovite were irradiated with SVHCI extracted from the LLNL electron beam ion trap (EBIT) at velocities of ca. 2 keV/amu. Atomic force microscopy of the surface reveals the formation of blisterlike defects associated with single ion impact. The determined defect volume which appears to increase linearly with the incident charge state and exhibits a threshold incident charge state has been determined using the AFM. These results indicate that target atoms are subjected to mutual electrostatic repulsion due to ionization through potential electron emission upon approach of the ion. If the repulsion leads to permanent atomic displacement, surface defects are formed
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