Evaluation of the ion implantation process for production of solar cells from silicon sheet materials. Final report, 15 December 1982-1 December 1983 | Zendy

M. B. Spitzer | Zendy

Open Access

Evaluation of the ion implantation process for production of solar cells from silicon sheet materials. Final report, 15 December 1982-1 December 1983

Author(s) -

M. B. Spitzer

Publication year - 1983

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/7035029

Subject(s) - ion implantation , annealing (glass) , silicon , materials science , ion beam , ion , enhanced data rates for gsm evolution , optoelectronics , engineering physics , metallurgy , chemistry , computer science , engineering , telecommunications , organic chemistry

This report describes research on the evaluation of the ion implantation process for junction formation in present-day sheet materials, including Czochralski, edge-defined film-fed growth, heat exchanger method, SEMIX, SILSO and dendritic web. Both furnace annealing and low temperature pulsed electron beam annealing are examined and the presence of temperature effects is identified. It is shown that efficiency can be increased by optimization of the thermal processing. A comparison of ion implantation to alternative processes is made. The manner in which high efficiency may be achieved with each of these materials is discussed.

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