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Study of high [Tc] superconducting thin films grown by MOCVD
Author(s) -
A. Erbil
Publication year - 1990
Language(s) - English
Resource type - Reports
DOI - 10.2172/6934082
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , superconductivity , thin film , materials science , superlattice , high temperature superconductivity , analytical chemistry (journal) , group 2 organometallic chemistry , mineralogy , epitaxy , chemistry , condensed matter physics , optoelectronics , nanotechnology , layer (electronics) , physics , organic chemistry , molecule , chromatography
Work is described briefly, which was carried out on development of techniques to grow metal-semiconductor superlattices (artificially layered materials) and on the copper oxide based susperconductors (naturally layered materials). The current growth technique utilized is metalorganic chemical vapor deposition (MOCVD). CdTe, PbTe, La, LaTe, and Bi[sub 2]Te[sub 3] were deposited, mostly on GaAs. Several YBa[sub 2]Cu[sub 3]O[sub 7] compounds were obtained with possible superconductivity at temperatures up to 550 K (1 part in 10[sup 4]). YBa[sub 2]Cu[sub 3]O[sub 7[minus]x] and Tl[sub 2]CaBa[sub 2]Cu[sub 2]O[sub y] thin films were deposited by MOCVD on common substrates such as glass.

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