z-logo
open-access-imgOpen Access
Delayed fracture of silicon. Silicon sheet growth development for the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project. Final report
Author(s) -
T. J. Chen,
W Knapp
Publication year - 1978
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6868645
Subject(s) - silicon , materials science , fracture toughness , knoop hardness test , indentation , fracture (geology) , bending , composite material , flexural strength , metallurgy , indentation hardness , microstructure
Bar specimens were cut from ingots of single crystal silicon, and acid-etched prior to testing. Artificial surface flaws were introduced in specimens by indentation with a Knoop hardness tester. The specimens were loaded in four-point bending to 95% of the nominal fracture stress, while keeping the surface area, containing the flaw, wet with test liquids. No evidence of delayed fracture, and, therefore stress corrosion, of single crystal silicon was observed for liquid environments including water, acetone and aqueous solutions of NaCl, NH/sub 4/OH, and HNO/sub 3/, when tested with a flaw parallel to a (110) surface. The fracture toughness was calculated to be K/sub IC/ = 0.591 x 10/sup 6/ N/m/sup 3/2/.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom