Open AccessDevelopment of a polysilicon process based on chemical vapor deposition: Phase 1. Third quarterly progress report, 1 April-30 June 1980
Author(s) -
Kenneth G. Sharp,
A. Arvidson,
F. Plahutnik,
D. Sawyer
Publication year - 1980
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6832859
Subject(s) - dichlorosilane , trichlorosilane , chemical vapor deposition , polycrystalline silicon , process engineering , silicon , nuclear engineering , vapor phase , materials science , deposition (geology) , chemical reactor , chemical engineering , engineering , nanotechnology , thermodynamics , optoelectronics , paleontology , physics , layer (electronics) , sediment , biology , thin film transistor
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