Open AccessSystem for measuring thermal-activation energy levels in silicon by thermally stimulated capacitance
Author(s) -
R.H. Cockrum
Publication year - 1982
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6814188
Subject(s) - capacitance , impurity , transient (computer programming) , materials science , silicon , analytical chemistry (journal) , differential capacitance , optoelectronics , acceptor , capacitance probe , deep level transient spectroscopy , chemistry , physics , electrode , condensed matter physics , organic chemistry , chromatography , computer science , operating system
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