Uniformity model for energetic ion processes using a Kaufman ion source | Zendy

David J. Smith | Zendy; Jacob A. Warner | Zendy; N. LeBarron | Zendy

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Uniformity model for energetic ion processes using a Kaufman ion source

Author(s) -

David J. Smith,

Jacob A. Warner,

N. LeBarron

Publication year - 1998

Publication title -

osti oai (u.s. department of energy office of scientific and technical information)

Language(s) - English

Resource type - Reports

DOI - 10.2172/677197

Subject(s) - etching (microfabrication) , ion , deposition (geology) , flux (metallurgy) , substrate (aquarium) , photoresist , ion source , materials science , inert , aperture (computer memory) , enhanced data rates for gsm evolution , analytical chemistry (journal) , chemistry , nanotechnology , physics , geology , metallurgy , paleontology , telecommunications , oceanography , organic chemistry , layer (electronics) , chromatography , sediment , computer science , acoustics

Processes that use energetic ions for large substrates require that the time-averaged erosion effects from the ion flux be uniform across the surface. A numerical model has been developed to determine this flux and its effects on surface etching of a silica/photoresist combination. The geometry of the source and substrate is very similar to a typical deposition geometry with single or planetary substrate rotation. The model was used to tune an inert ion-etching process that used single or multiple Kaufman sources to less than 3% uniformity over a 30-cm aperture after etching 8 {micro}m of material. The same model can be used to predict uniformity for ion-assisted deposition (IAD)

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