Open AccessCharacterization of photoluminescent (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3} thin-films prepared by metallorganic chemical vapor deposition
Author(s) -
Joanna McKittrick,
C. F. Bacalski,
G. A. Hirata,
Kevin M. Hubbard,
Steve Pattillo,
Kenneth V. Salazar,
Mitchell Trkula
Publication year - 1998
Language(s) - English
Resource type - Reports
DOI - 10.2172/676881
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , nanocrystalline material , materials science , europium , yttrium , thin film , analytical chemistry (journal) , sapphire , substrate (aquarium) , monoclinic crystal system , photoluminescence , epitaxy , mineralogy , crystallography , oxide , chemistry , nanotechnology , crystal structure , luminescence , optics , metallurgy , optoelectronics , geology , laser , physics , oceanography , layer (electronics) , chromatography
Europium doped yttrium oxide, (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3}, thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y{sub 2}O{sub 3}, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in the [111] with increasing deposition time. Monoclinic Y{sub 2}O{sub 3}:Eu{sup 3+} was observed in x-ray diffraction for deposition temperatures {ge}600 C on both (111) Si and (001) sapphire substrates. This was also confirmed by the photoluminescent emission spectra