Open AccessInGaAs/InP heterojunction bipolar transistors for ultra-low power circuit applications
Author(s) -
P.C. Chang,
Albert G. Baca,
M. J. Hafich,
Carol I. H. Ashby
Publication year - 1998
Language(s) - English
Resource type - Reports
DOI - 10.2172/674756
Subject(s) - heterojunction bipolar transistor , optoelectronics , heterojunction , bipolar junction transistor , materials science , current density , transistor , gallium arsenide , indium gallium arsenide , electrical engineering , physics , voltage , engineering , quantum mechanics
For many modern day portable electronic applications, low power high speed devices have become very desirable. Very high values of f{sub T} and f{sub MAX} have been reported with InGaAs/InP heterojunction bipolar transistors (HBTs), but only under high bias and high current level operating conditions. An InGaAs/InP ultra-lowpower HBT with f{sub MAX} greater than 10 GHz operating at less than 20 {micro}A has been reported for the first time in this work. The results are obtained on a 2.5 x 5 {micro}m{sup 2} device, corresponding to less than 150 A/cm{sup 2} of current density. These are the lowest current levels at which f{sub MAX} {ge} 10 GHz has been reported