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Thin films of gallium arsenide on low-cost substrates. Final technical report, July 5, 1976-December 5, 1978
Author(s) -
R. P. Ruth,
P. D. Dapkus,
R. D. Dupuis,
R.E. Johnson,
L. A. Moudy,
J.J. Yang,
R. D. Yingling
Publication year - 1980
Language(s) - English
Resource type - Reports
DOI - 10.2172/6729266
Subject(s) - materials science , crystallite , thin film , grain boundary , amorphous solid , substrate (aquarium) , polycrystalline silicon , trimethylgallium , optoelectronics , analytical chemistry (journal) , epitaxy , nanotechnology , metallurgy , layer (electronics) , crystallography , metalorganic vapour phase epitaxy , thin film transistor , chemistry , microstructure , oceanography , chromatography , geology

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