Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics | Zendy

H. Schoene | Zendy; D.S. Walsh | Zendy; F.W. Sexton | Zendy; B.L. Doyle | Zendy; J.F. Aurand | Zendy; P.E. Dodd | Zendy; Richard S. Flores | Zendy; N.D. Wing | Zendy

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Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics

Author(s) -

H. Schoene,

D.S. Walsh,

F.W. Sexton,

B.L. Doyle,

J.F. Aurand,

P.E. Dodd,

Richard S. Flores,

N.D. Wing

Publication year - 1998

Language(s) - English

Resource type - Reports

DOI - 10.2172/663234

Subject(s) - ion , transistor , ion beam , charge (physics) , transient (computer programming) , cmos , ion current , current (fluid) , optoelectronics , electronics , materials science , atomic physics , voltage , physics , electrical engineering , computer science , engineering , quantum mechanics , operating system

The entire current transient induced by single 12 MeV Carbon ions was measured at a 5GHz analog bandwidth. A focused ion micro-beam was used to acquire multiple single ion transients at multiple locations of a single CMOS transistor. The current transients reveal clear and discernible contributions of drift and diffusive charge collection. Transients measured for drain and off-drain ion strikes compare well to 3D DAVINCI calculations. Estimates are presented for the drift assisted funneling charge collection depth

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