Open AccessTime-resolved ion beam induced charge collection (TRIBICC) in micro-electronics
Author(s) -
H Schoene,
D S Walsh,
F W Sexton,
B L Doyle,
J F Aurand,
P E Dodd,
R S Flores,
N. D. Wing
Publication year - 1998
Language(s) - English
Resource type - Reports
DOI - 10.2172/663234
Subject(s) - ion , transistor , ion beam , charge (physics) , transient (computer programming) , cmos , ion current , current (fluid) , optoelectronics , electronics , materials science , atomic physics , voltage , physics , electrical engineering , computer science , engineering , quantum mechanics , operating system
The entire current transient induced by single 12 MeV Carbon ions was measured at a 5GHz analog bandwidth. A focused ion micro-beam was used to acquire multiple single ion transients at multiple locations of a single CMOS transistor. The current transients reveal clear and discernible contributions of drift and diffusive charge collection. Transients measured for drain and off-drain ion strikes compare well to 3D DAVINCI calculations. Estimates are presented for the drift assisted funneling charge collection depth