Open AccessProgress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition
Author(s) -
R M Biefeld,
A A Allerman,
S R Kurtz,
K C Baucom
Publication year - 1998
Language(s) - English
Resource type - Reports
DOI - 10.2172/661741
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , materials science , optoelectronics , laser , infrared , quantum well , layer (electronics) , nanotechnology , optics , epitaxy , physics
We report on recent progress and improvements in the metal-organic chemical vapor deposition (MOCVD) growth of mid-infrared lasers and using a high speed rotating disk reactor (RDR). The devices contain AlAsSb active regions. These lasers have multi-stage, type I InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multi-stage injection lasers and AlAsSb is an electron confinement layer. These structures are the first MOCVD multi-stage devices. Growth in an RDR was necessary to avoid the previously observed Al memory effects found in conventional horizontal reactors. A single stage, optically pumped laser yielded improved power (greater than 650 mW/facet) at 80K and 3.8um. A multi-stage 3.8-3.9um laser structure operated up to T=170K. At 80K, peak power greater than 100mW and a high slope- efficiency were observed in gain guided lasers