Sequential purification and crystal growth for the production of low cost silicon substrates. Annual report, 15 September 1979-14 September 1980
Author(s) -
Ming-Chi Liaw,
F. Secco d’Aragona
Publication year - 1980
Publication title -
osti oai (u.s. department of energy office of scientific and technical information)
Language(s) - English
Resource type - Reports
DOI - 10.2172/6602302
Subject(s) - ingot , silicon , materials science , impurity , recrystallization (geology) , polycrystalline silicon , chemical engineering , crystallite , crystal growth , redistribution (election) , fabrication , monocrystalline silicon , metallurgy , nanotechnology , crystallography , chemistry , layer (electronics) , organic chemistry , alloy , engineering , biology , paleontology , thin film transistor , alternative medicine , law , pathology , political science , medicine , politics
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